TK4A60DA Specs and Replacement

Type Designator: TK4A60DA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO220SIS

TK4A60DA substitution

- MOSFET ⓘ Cross-Reference Search

 

TK4A60DA datasheet

 ..1. Size:199K  toshiba
 tk4a60da.pdf pdf_icon

TK4A60DA

TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4A60DA Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.7 (typ.) High forward transfer admittance Yfs = 2.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) ... See More ⇒

 ..2. Size:253K  inchange semiconductor
 tk4a60da.pdf pdf_icon

TK4A60DA

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK4A60DA ITK4A60DA FEATURES Low drain-source on-resistance RDS(ON) = 1.7 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING... See More ⇒

 7.1. Size:190K  toshiba
 tk4a60db.pdf pdf_icon

TK4A60DA

TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4A60DB Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs = 2.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600V) Enhancement mode Vth ... See More ⇒

 7.2. Size:188K  toshiba
 tk4a60d.pdf pdf_icon

TK4A60DA

TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4A60D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.4 (typ.) High forward transfer admittance Yfs = 2.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Ab... See More ⇒

SHOW MORE

Detailed specifications: TK40P04M1, TK40S10K3Z, TK40X10J1, TK45P03M1, TK4A50D, TK4A53D, TK4A55DA, TK4A55D, IRFB31N20D, TK4A60DB, TK4A60D, TK4A65DA, TK4P50D, TK4P55DA, TK4P55D, TK4P60DA, TK4P60DB

Keywords - TK4A60DA MOSFET specs

 TK4A60DA cross reference

 TK4A60DA equivalent finder

 TK4A60DA pdf lookup

 TK4A60DA substitution

 TK4A60DA replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.