Справочник MOSFET. TK4A60DA

 

TK4A60DA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TK4A60DA
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 55 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.2 Ohm
   Тип корпуса: TO220SIS
 

 Аналог (замена) для TK4A60DA

   - подбор ⓘ MOSFET транзистора по параметрам

 

TK4A60DA Datasheet (PDF)

 ..1. Size:199K  toshiba
 tk4a60da.pdf pdf_icon

TK4A60DA

TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A60DA Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: Yfs = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

 ..2. Size:253K  inchange semiconductor
 tk4a60da.pdf pdf_icon

TK4A60DA

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A60DAITK4A60DAFEATURESLow drain-source on-resistance:RDS(ON) = 1.7 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

 7.1. Size:190K  toshiba
 tk4a60db.pdf pdf_icon

TK4A60DA

TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A60DB Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V) Enhancement mode: Vth

 7.2. Size:188K  toshiba
 tk4a60d.pdf pdf_icon

TK4A60DA

TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 (typ.) High forward transfer admittance: Yfs = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Ab

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... TK40P04M1 , TK40S10K3Z , TK40X10J1 , TK45P03M1 , TK4A50D , TK4A53D , TK4A55DA , TK4A55D , IRF730 , TK4A60DB , TK4A60D , TK4A65DA , TK4P50D , TK4P55DA , TK4P55D , TK4P60DA , TK4P60DB .

History: BUK7Y29-40E | ZXMN6A07ZTA | TTD65N04AT

 

 
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