TK4A60DB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK4A60DB Datasheet (PDF)

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TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A60DB Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V) Enhancement mode: Vth

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INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A60DBITK4A60DBFEATURESLow drain-source on-resistance:RDS(ON) = 1.7 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

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TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 (typ.) High forward transfer admittance: Yfs = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Ab

7.2. Size:199K toshiba
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TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A60DA Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: Yfs = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)