All MOSFET. TK4A60DB Datasheet

 

TK4A60DB MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK4A60DB
   Marking Code: K4A60DB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.4 V
   |Id|ⓘ - Maximum Drain Current: 3.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO220SIS

 TK4A60DB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK4A60DB Datasheet (PDF)

 ..1. Size:190K  toshiba
 tk4a60db.pdf

TK4A60DB TK4A60DB

TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A60DB Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V) Enhancement mode: Vth

 ..2. Size:253K  inchange semiconductor
 tk4a60db.pdf

TK4A60DB TK4A60DB

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A60DBITK4A60DBFEATURESLow drain-source on-resistance:RDS(ON) = 1.7 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

 7.1. Size:188K  toshiba
 tk4a60d.pdf

TK4A60DB TK4A60DB

TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 (typ.) High forward transfer admittance: Yfs = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Ab

 7.2. Size:199K  toshiba
 tk4a60da.pdf

TK4A60DB TK4A60DB

TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A60DA Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: Yfs = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

 7.3. Size:258K  inchange semiconductor
 tk4a60d.pdf

TK4A60DB TK4A60DB

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A60DITK4A60DFEATURESLow drain-source on-resistance:RDS(ON) = 1.4 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

 7.4. Size:253K  inchange semiconductor
 tk4a60da.pdf

TK4A60DB TK4A60DB

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A60DAITK4A60DAFEATURESLow drain-source on-resistance:RDS(ON) = 1.7 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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