TK4A60DB Specs and Replacement

Type Designator: TK4A60DB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO220SIS

TK4A60DB substitution

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TK4A60DB datasheet

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TK4A60DB

TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4A60DB Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs = 2.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600V) Enhancement mode Vth ... See More ⇒

 ..2. Size:253K  inchange semiconductor
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TK4A60DB

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK4A60DB ITK4A60DB FEATURES Low drain-source on-resistance RDS(ON) = 1.7 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING... See More ⇒

 7.1. Size:188K  toshiba
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TK4A60DB

TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4A60D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.4 (typ.) High forward transfer admittance Yfs = 2.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Ab... See More ⇒

 7.2. Size:199K  toshiba
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TK4A60DB

TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4A60DA Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.7 (typ.) High forward transfer admittance Yfs = 2.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) ... See More ⇒

Detailed specifications: TK40S10K3Z, TK40X10J1, TK45P03M1, TK4A50D, TK4A53D, TK4A55DA, TK4A55D, TK4A60DA, STP65NF06, TK4A60D, TK4A65DA, TK4P50D, TK4P55DA, TK4P55D, TK4P60DA, TK4P60DB, TK50J30D

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.