TK5A50D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK5A50D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO220SIS

Búsqueda de reemplazo de MOSFET TK5A50D

TK5A50D Datasheet (PDF)

..1. Size:179K toshiba
tk5a50d.pdf

TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK5A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: Yfs = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Abs

..2. Size:252K inchange semiconductor
tk5a50d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A50DITK5A50DFEATURESLow drain-source on-resistance:RDS(on) = 1.3 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

9.1. Size:189K toshiba
tk5a53d.pdf

TK5A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK5A53D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement mode: Vth =

9.2. Size:189K toshiba
tk5a55d.pdf

TK5A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK5A55D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.4 (typ.) High forward transfer admittance: |Yfs| = 2.4 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth =

9.3. Size:252K inchange semiconductor
tk5a53d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A53DITK5A53DFEATURESLow drain-source on-resistance:RDS(on) = 1.2 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

9.4. Size:252K inchange semiconductor
tk5a55d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A55DITK5A55DFEATURESLow drain-source on-resistance:RDS(ON) = 1.4 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

Otros transistores... TK4P60DB , TK50J30D , TK50J60U , TK50P03M1 , TK50P04M1 , TK50X15J1 , TK55A10J1 , TK5A45DA , NCEP15T14 , TK5A53D , TK5A55D , TK5A60D , TK5A65DA , TK5A65D , TK5P50D , TK5P53D , TK60A08J1 .

Liste

Recientemente añadidas las descripciónes de los transistores: