TK5A50D - параметры транзистора MOSFET, его аналоги, datasheet

TK5A50D Datasheet (PDF)

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TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK5A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: Yfs = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Abs

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INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A50DITK5A50DFEATURESLow drain-source on-resistance:RDS(on) = 1.3 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

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TK5A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK5A53D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement mode: Vth =

9.2. Size:189K toshiba
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TK5A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK5A55D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.4 (typ.) High forward transfer admittance: |Yfs| = 2.4 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth =