All MOSFET. TK5A50D Datasheet

 

TK5A50D MOSFET. Datasheet pdf. Equivalent

Type Designator: TK5A50D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.4 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO220SIS

TK5A50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK5A50D Datasheet (PDF)

0.1. tk5a50d.pdf Size:179K _toshiba

TK5A50D
TK5A50D

TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A50D Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Abs

0.2. tk5a50d.pdf Size:252K _inchange_semiconductor

TK5A50D
TK5A50D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5A50D,ITK5A50D ·FEATURES ·Low drain-source on-resistance: RDS(on) = 1.3Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(T

 9.1. tk5a55d.pdf Size:189K _toshiba

TK5A50D
TK5A50D

TK5A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A55D Switching Regulator Applications Unit: mm 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2 A • Low drain-source ON-resistance: RDS (ON) = 1.4 Ω(typ.) • High forward transfer admittance: |Yfs| = 2.4 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) • Enhancement mode: Vth =

9.2. tk5a53d.pdf Size:189K _toshiba

TK5A50D
TK5A50D

TK5A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A53D Switching Regulator Applications Unit: mm 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2 A • Low drain-source ON-resistance: RDS (ON) = 1.2 Ω(typ.) • High forward transfer admittance: |Yfs| = 2.8 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 525 V) • Enhancement mode: Vth =

 9.3. tk5a55d.pdf Size:252K _inchange_semiconductor

TK5A50D
TK5A50D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5A55D,ITK5A55D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.4Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(T

9.4. tk5a53d.pdf Size:252K _inchange_semiconductor

TK5A50D
TK5A50D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5A53D,ITK5A53D ·FEATURES ·Low drain-source on-resistance: RDS(on) = 1.2Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(T

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