TK5A55D MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK5A55D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK5A55D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 550 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm

Encapsulados: TO220SIS

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TK5A55D datasheet

..1. Size:189K toshiba
tk5a55d.pdf pdf_icon

TK5A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK5A55D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.4 (typ.) High forward transfer admittance Yfs = 2.4 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth =

..2. Size:252K inchange semiconductor
tk5a55d.pdf pdf_icon

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5A55D ITK5A55D FEATURES Low drain-source on-resistance RDS(ON) = 1.4 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

9.1. Size:189K toshiba
tk5a53d.pdf pdf_icon

TK5A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK5A53D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.2 (typ.) High forward transfer admittance Yfs = 2.8 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 525 V) Enhancement mode Vth =

9.2. Size:179K toshiba
tk5a50d.pdf pdf_icon

TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK5A50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.3 (typ.) High forward transfer admittance Yfs = 3.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Abs

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