Справочник MOSFET. TK5A55D

 

TK5A55D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK5A55D
   Маркировка: K5A55D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 550 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 11 nC
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 60 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.7 Ohm
   Тип корпуса: TO220SIS

 Аналог (замена) для TK5A55D

 

 

TK5A55D Datasheet (PDF)

 ..1. Size:189K  toshiba
 tk5a55d.pdf

TK5A55D TK5A55D

TK5A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK5A55D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.4 (typ.) High forward transfer admittance: |Yfs| = 2.4 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth =

 ..2. Size:252K  inchange semiconductor
 tk5a55d.pdf

TK5A55D TK5A55D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A55DITK5A55DFEATURESLow drain-source on-resistance:RDS(ON) = 1.4 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

 9.1. Size:189K  toshiba
 tk5a53d.pdf

TK5A55D TK5A55D

TK5A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK5A53D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement mode: Vth =

 9.2. Size:179K  toshiba
 tk5a50d.pdf

TK5A55D TK5A55D

TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK5A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: Yfs = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Abs

 9.3. Size:252K  inchange semiconductor
 tk5a53d.pdf

TK5A55D TK5A55D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A53DITK5A53DFEATURESLow drain-source on-resistance:RDS(on) = 1.2 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

 9.4. Size:252K  inchange semiconductor
 tk5a50d.pdf

TK5A55D TK5A55D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A50DITK5A50DFEATURESLow drain-source on-resistance:RDS(on) = 1.3 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

Другие MOSFET... TK50J60U , TK50P03M1 , TK50P04M1 , TK50X15J1 , TK55A10J1 , TK5A45DA , TK5A50D , TK5A53D , IRF9640 , TK5A60D , TK5A65DA , TK5A65D , TK5P50D , TK5P53D , TK60A08J1 , TK60J25D , TK60P03M1 .

 

 
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