TK5A55D MOSFET Datasheet: N-Ch, 550V, 5A. Full specification with pinout and replacement list

TK5A55D Specs and Replacement

   Type Designator: TK5A55D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: TO220SIS

TK5A55D substitution

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TK5A55D datasheet

..1. Size:189K toshiba
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TK5A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK5A55D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.4 (typ.) High forward transfer admittance Yfs = 2.4 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth =... See More ⇒

..2. Size:252K inchange semiconductor
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INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5A55D ITK5A55D FEATURES Low drain-source on-resistance RDS(ON) = 1.4 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒

9.1. Size:189K toshiba
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TK5A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK5A53D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.2 (typ.) High forward transfer admittance Yfs = 2.8 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 525 V) Enhancement mode Vth =... See More ⇒

9.2. Size:179K toshiba
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TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK5A50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.3 (typ.) High forward transfer admittance Yfs = 3.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Abs... See More ⇒