TK5A60D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK5A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK5A60D Switching Regulator Applications Unit: mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: Yfs = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vt

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A60DITK5A60DFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

TK5A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK5A60WTK5A60WTK5A60WTK5A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.77 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance

TK5A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK5A60W5TK5A60W5TK5A60W5TK5A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 65 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.8 (typ.)by using Super Junction Structure : D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A60WITK5A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.77 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.27mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulat

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A60W5ITK5A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.95Easy to control Gate switchingEnhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=0.23mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators