TK5A60D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK5A60D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.43 Ohm

Encapsulados: TO220SIS

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TK5A60D datasheet

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TK5A60D

TK5A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK5A60D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.2 (typ.) High forward transfer admittance Yfs = 3.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vt

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TK5A60D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5A60D ITK5A60D FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

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TK5A60D

TK5A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK5A60W TK5A60W TK5A60W TK5A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.77 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance

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TK5A60D

TK5A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK5A60W5 TK5A60W5 TK5A60W5 TK5A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 65 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.8 (typ.) by using Super Junction Structure D

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