TK5A60D MOSFET. Datasheet pdf. Equivalent
Type Designator: TK5A60D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 35 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.4 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 1.43 Ohm
Package: TO220SIS
TK5A60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK5A60D Datasheet (PDF)
0.1. tk5a60d.pdf 
Size:212K _toshiba
TK5A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A60D Switching Regulator Applications Unit: mm 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2 A • Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement-mode: Vt
0.2. tk5a60d.pdf Size:252K _inchange_semiconductor
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5A60D，ITK5A60D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(T
8.1. tk5a60w.pdf Size:235K _toshiba
TK5A60W MOSFETs Silicon N-Channel MOS (DTMOS) TK5A60W TK5A60W TK5A60W TK5A60W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.77 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhance
8.2. tk5a60w5.pdf Size:531K _toshiba
TK5A60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK5A60W5 TK5A60W5 TK5A60W5 TK5A60W5 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time: trr = 65 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.8 Ω (typ.) by using Super Junction Structure : D
8.3. tk5a60w.pdf Size:253K _inchange_semiconductor
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5A60W，ITK5A60W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.77Ω (typ.) ·Easy to control Gate switching ·Enhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.27mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulat
8.4. tk5a60w5.pdf Size:258K _inchange_semiconductor
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5A60W5，ITK5A60W5 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.95Ω ·Easy to control Gate switching ·Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=0.23mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
