TK5A60D. Аналоги и основные параметры
Наименование производителя: TK5A60D
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 80 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.43 Ohm
Тип корпуса: TO220SIS
Аналог (замена) для TK5A60D
- подборⓘ MOSFET транзистора по параметрам
TK5A60D даташит
tk5a60d.pdf
TK5A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK5A60D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.2 (typ.) High forward transfer admittance Yfs = 3.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vt
tk5a60d.pdf
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5A60D ITK5A60D FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T
tk5a60w.pdf
TK5A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK5A60W TK5A60W TK5A60W TK5A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.77 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance
tk5a60w5.pdf
TK5A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK5A60W5 TK5A60W5 TK5A60W5 TK5A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 65 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.8 (typ.) by using Super Junction Structure D
Другие IGBT... TK50P03M1, TK50P04M1, TK50X15J1, TK55A10J1, TK5A45DA, TK5A50D, TK5A53D, TK5A55D, AO4468, TK5A65DA, TK5A65D, TK5P50D, TK5P53D, TK60A08J1, TK60J25D, TK60P03M1, TK60S06K3L
History: IXTH1R4N250P3 | BLS65R380-P | VBZB8205A
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