TK5A60D Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TK5A60D
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 80 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.43 Ohm
Тип корпуса: TO220SIS
- подбор MOSFET транзистора по параметрам
TK5A60D Datasheet (PDF)
tk5a60d.pdf

TK5A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK5A60D Switching Regulator Applications Unit: mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: Yfs = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vt
tk5a60d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A60DITK5A60DFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T
tk5a60w.pdf

TK5A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK5A60WTK5A60WTK5A60WTK5A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.77 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance
tk5a60w5.pdf

TK5A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK5A60W5TK5A60W5TK5A60W5TK5A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 65 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.8 (typ.)by using Super Junction Structure : D
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: MCH3484 | DMN30H4D0L
History: MCH3484 | DMN30H4D0L



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