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TK6A53D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK6A53D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 525 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm
   Paquete / Cubierta: TO220SIS
     - Selección de transistores por parámetros

 

TK6A53D Datasheet (PDF)

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TK6A53D

TK6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK6A53D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.1 (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement mode: Vth =

 ..2. Size:252K  inchange semiconductor
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TK6A53D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK6A53DITK6A53DFEATURESLow drain-source on-resistance:RDS(ON) = 1.1 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

 9.1. Size:172K  toshiba
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TK6A53D

TK6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK6A50D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth

 9.2. Size:187K  toshiba
 tk6a55da.pdf pdf_icon

TK6A53D

TK6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK6A55DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.25 (typ.) High forward transfer admittance: |Yfs| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2N6800SM | BLM05N03-D

 

 
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