TK6A53D Specs and Replacement

Type Designator: TK6A53D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 525 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO220SIS

TK6A53D substitution

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TK6A53D datasheet

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TK6A53D

TK6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK6A53D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.1 (typ.) High forward transfer admittance Yfs = 2.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 525 V) Enhancement mode Vth = ... See More ⇒

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TK6A53D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK6A53D ITK6A53D FEATURES Low drain-source on-resistance RDS(ON) = 1.1 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒

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TK6A53D

TK6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK6A50D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.2 (typ.) High forward transfer admittance Yfs = 2.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth ... See More ⇒

 9.2. Size:187K  toshiba
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TK6A53D

TK6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK6A55DA Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.25 (typ.) High forward transfer admittance Yfs = 3.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth... See More ⇒

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Detailed specifications: TK60A08J1, TK60J25D, TK60P03M1, TK60S06K3L, TK65L60V, TK65S04K3L, TK6A45DA, TK6A50D, IRF1404, TK6A55DA, TK6A60D, TK6A65D, TK6P53D, TK70A06J1, TK70J04J3, TK70J20D, TK70X04K3

Keywords - TK6A53D MOSFET specs

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