TK6A53D - параметры транзистора MOSFET, его аналоги, datasheet

TK6A53D Datasheet (PDF)

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TK6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK6A53D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.1 (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement mode: Vth =

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INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK6A53DITK6A53DFEATURESLow drain-source on-resistance:RDS(ON) = 1.1 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

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TK6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK6A50D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth

9.2. Size:187K toshiba
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TK6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK6A55DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.25 (typ.) High forward transfer admittance: |Yfs| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth