TK8A60DA Todos los transistores

 

TK8A60DA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK8A60DA
   Código: K8A60DA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 20 nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO220SIS
 

 Búsqueda de reemplazo de TK8A60DA MOSFET

   - Selección ⓘ de transistores por parámetros

 

TK8A60DA Datasheet (PDF)

 ..1. Size:197K  toshiba
 tk8a60da.pdf pdf_icon

TK8A60DA

TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A60DA Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: Yfs = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 ..2. Size:253K  inchange semiconductor
 tk8a60da.pdf pdf_icon

TK8A60DA

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8A60DAITK8A60DAFEATURESLow drain-source on-resistance:RDS(ON) = 0.8 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

 8.1. Size:264K  toshiba
 tk8a60w.pdf pdf_icon

TK8A60DA

TK8A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK8A60WTK8A60WTK8A60WTK8A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.42 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance

 8.2. Size:261K  toshiba
 tk8a60w5.pdf pdf_icon

TK8A60DA

TK8A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK8A60W5TK8A60W5TK8A60W5TK8A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 80 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.44 (typ.) by used to Super

MOSTRAR MÁS

Otros transistores... TK80X04K3 , TK8A10K3 , TK8A25DA , TK8A45DA , TK8A45D , TK8A50DA , TK8A50D , TK8A55DA , AON7410 , TK8A65D , TK8P25DA , TK8S06K3L , TK9A45D , TK9A55DA , TK9A60D , TPC6008-H , TPC6009-H .

History: HRP35N04K | IRFB4332PBF

 

 
Back to Top

 


 
.