TK8A60DA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK8A60DA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Paquete / Cubierta: TO220SIS
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TK8A60DA Datasheet (PDF)
tk8a60da.pdf
TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A60DA Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: Yfs = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
tk8a60da.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8A60DAITK8A60DAFEATURESLow drain-source on-resistance:RDS(ON) = 0.8 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING
tk8a60w.pdf
TK8A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK8A60WTK8A60WTK8A60WTK8A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.42 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance
tk8a60w5.pdf
TK8A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK8A60W5TK8A60W5TK8A60W5TK8A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 80 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.44 (typ.) by used to Super
tk8a65w.pdf
TK8A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK8A65WTK8A65WTK8A65WTK8A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.53 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancemen
tk8a65d.pdf
TK8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absol
tk8a65w.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8A65WITK8A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.53 (typ.)Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.3mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T
tk8a65d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8A65DITK8A65DFEATURESLow drain-source on-resistance:RDS(ON) = 0.7 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T
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