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TK8A60DA PDF Specs and Replacement


   Type Designator: TK8A60DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220SIS
 

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TK8A60DA PDF Specs

 ..1. Size:197K  toshiba
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TK8A60DA

TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK8A60DA Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.8 (typ.) High forward transfer admittance Yfs = 4.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) ... See More ⇒

 ..2. Size:253K  inchange semiconductor
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TK8A60DA

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8A60DA ITK8A60DA FEATURES Low drain-source on-resistance RDS(ON) = 0.8 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING... See More ⇒

 8.1. Size:264K  toshiba
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TK8A60DA

TK8A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK8A60W TK8A60W TK8A60W TK8A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.42 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance... See More ⇒

 8.2. Size:261K  toshiba
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TK8A60DA

TK8A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK8A60W5 TK8A60W5 TK8A60W5 TK8A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 80 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.44 (typ.) by used to Super... See More ⇒

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Detailed specifications: TK80X04K3 , TK8A10K3 , TK8A25DA , TK8A45DA , TK8A45D , TK8A50DA , TK8A50D , TK8A55DA , SPP20N60C3 , TK8A65D , TK8P25DA , TK8S06K3L , TK9A45D , TK9A55DA , TK9A60D , TPC6008-H , TPC6009-H .

History: 2N5519

Keywords - TK8A60DA MOSFET specs

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