TK8A60DA - описание и поиск аналогов

 ..1. Size:197K  toshiba
 tk8a60da.pdf 

TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK8A60DA Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.8 (typ.) High forward transfer admittance Yfs = 4.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 ..2. Size:253K  inchange semiconductor
 tk8a60da.pdf 

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8A60DA ITK8A60DA FEATURES Low drain-source on-resistance RDS(ON) = 0.8 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING

 8.1. Size:264K  toshiba
 tk8a60w.pdf 

TK8A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK8A60W TK8A60W TK8A60W TK8A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.42 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance

 8.2. Size:261K  toshiba
 tk8a60w5.pdf 

TK8A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK8A60W5 TK8A60W5 TK8A60W5 TK8A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 80 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.44 (typ.) by used to Super

 9.1. Size:312K  toshiba
 tk8a65w.pdf 

TK8A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK8A65W TK8A65W TK8A65W TK8A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.53 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancemen

 9.2. Size:191K  toshiba
 tk8a65d.pdf 

TK8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK8A65D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.7 (typ.) High forward transfer admittance Yfs = 4.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 650 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absol

 9.3. Size:253K  inchange semiconductor
 tk8a65w.pdf 

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8A65W ITK8A65W FEATURES Low drain-source on-resistance RDS(ON) = 0.53 (typ.) Enhancement mode Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.3mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

 9.4. Size:253K  inchange semiconductor
 tk8a65d.pdf 

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8A65D ITK8A65D FEATURES Low drain-source on-resistance RDS(ON) = 0.7 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T