TK9A60D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK9A60D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.83 Ohm
   Paquete / Cubierta: TO220SIS

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TK9A60D Datasheet (PDF)

..1. Size:190K toshiba
tk9a60d.pdf

TK9A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK9A60D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.67 (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth =

..2. Size:253K inchange semiconductor
tk9a60d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK9A60DITK9A60DFEATURESLow drain-source on-resistance:RDS(ON) = 0.67 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

9.1. Size:374K toshiba
tk9a65w.pdf

TK9A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK9A65WTK9A65WTK9A65WTK9A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.43 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement

9.2. Size:253K inchange semiconductor
tk9a65w.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK9A65WITK9A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.43 (typ.)Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.35mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

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