TK9A60D PDF and Equivalents Search

 

TK9A60D Specs and Replacement


   Type Designator: TK9A60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.83 Ohm
   Package: TO220SIS
 

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TK9A60D datasheet

 ..1. Size:190K  toshiba
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TK9A60D

TK9A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK9A60D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.67 (typ.) High forward transfer admittance Yfs = 4.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth = ... See More ⇒

 ..2. Size:253K  inchange semiconductor
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TK9A60D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK9A60D ITK9A60D FEATURES Low drain-source on-resistance RDS(ON) = 0.67 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

 9.1. Size:374K  toshiba
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TK9A60D

TK9A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK9A65W TK9A65W TK9A65W TK9A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.43 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement... See More ⇒

 9.2. Size:253K  inchange semiconductor
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TK9A60D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK9A65W ITK9A65W FEATURES Low drain-source on-resistance RDS(ON) = 0.43 (typ.) Enhancement mode Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.35mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(... See More ⇒

Detailed specifications: TK8A50D , TK8A55DA , TK8A60DA , TK8A65D , TK8P25DA , TK8S06K3L , TK9A45D , TK9A55DA , 5N65 , TPC6008-H , TPC6009-H , TPC6010-H , TPC6011 , TPC6012 , TPC6103 , TPC6109-H , TPC6110 .

Keywords - TK9A60D MOSFET specs

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