All MOSFET. TK9A60D Datasheet

 

TK9A60D MOSFET. Datasheet pdf. Equivalent

Type Designator: TK9A60D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 24 nC

Maximum Drain-Source On-State Resistance (Rds): 0.83 Ohm

Package: TO220SIS

TK9A60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK9A60D Datasheet (PDF)

0.1. tk9a60d.pdf Size:190K _toshiba

TK9A60D
TK9A60D

TK9A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK9A60D Switching Regulator Applications Unit: mm 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2 A • Low drain-source ON-resistance: RDS (ON) = 0.67 Ω(typ.) • High forward transfer admittance: |Yfs| = 4.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement mode: Vth =

9.1. tk9a65w.pdf Size:374K _toshiba

TK9A60D
TK9A60D

TK9A65W MOSFETs Silicon N-Channel MOS (DTMOS) TK9A65W TK9A65W TK9A65W TK9A65W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.43 Ω(typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement

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