TPC6010-H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPC6010-H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.4 nS

Cossⓘ - Capacitancia de salida: 95 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.063 Ohm

Encapsulados: SOT6 VS6

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TPC6010-H datasheet

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 tpc6010-h.pdf pdf_icon

TPC6010-H

TPC6010-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC6010-H TPC6010-H TPC6010-H TPC6010-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 2.7 nC(typ.) (4) Low

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 tpc6012.pdf pdf_icon

TPC6010-H

TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPC6012 Notebook PC Applications Portable Equipment Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 20 m (typ.) Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement mode Vth = 0.5 to 1.2 V (VDS = 10 V, ID

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 tpc6011.pdf pdf_icon

TPC6010-H

TPC6011 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TPC6011 Notebook PC Applications Portable Equipment Applications Unit mm Low drain-source ON-resistance RDS (ON) = 16 m (typ.) ( VGS = 10V) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta

 9.1. Size:195K  toshiba
 tpc6007-h.pdf pdf_icon

TPC6010-H

TPC6007-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6007-H High-Efficiency DC/DC Converter Applications Unit mm Small footprint due to small and thin package High-speed switching Small gate charge Qsw = 1.8 nC (typ.) Low drain-source ON-resistance RDS (ON) = 40 m (typ.) High forward transfer admittance

MOSTRAR MÁS

Otros transistores... TK8A65D, TK8P25DA, TK8S06K3L, TK9A45D, TK9A55DA, TK9A60D, TPC6008-H, TPC6009-H, AON6380, TPC6011, TPC6012, TPC6103, TPC6109-H, TPC6110, TPC6111, TPC6113, TPC6130