TPC6010-H. Аналоги и основные параметры

Наименование производителя: TPC6010-H

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.7 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.1 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 2.4 ns

Cossⓘ - Выходная емкость: 95 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.063 Ohm

Тип корпуса: SOT6 VS6

Аналог (замена) для TPC6010-H

- подборⓘ MOSFET транзистора по параметрам

 

TPC6010-H даташит

 ..1. Size:223K  toshiba
 tpc6010-h.pdf pdf_icon

TPC6010-H

TPC6010-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC6010-H TPC6010-H TPC6010-H TPC6010-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 2.7 nC(typ.) (4) Low

 8.1. Size:211K  toshiba
 tpc6012.pdf pdf_icon

TPC6010-H

TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPC6012 Notebook PC Applications Portable Equipment Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 20 m (typ.) Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement mode Vth = 0.5 to 1.2 V (VDS = 10 V, ID

 8.2. Size:212K  toshiba
 tpc6011.pdf pdf_icon

TPC6010-H

TPC6011 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TPC6011 Notebook PC Applications Portable Equipment Applications Unit mm Low drain-source ON-resistance RDS (ON) = 16 m (typ.) ( VGS = 10V) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta

 9.1. Size:195K  toshiba
 tpc6007-h.pdf pdf_icon

TPC6010-H

TPC6007-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6007-H High-Efficiency DC/DC Converter Applications Unit mm Small footprint due to small and thin package High-speed switching Small gate charge Qsw = 1.8 nC (typ.) Low drain-source ON-resistance RDS (ON) = 40 m (typ.) High forward transfer admittance

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... TK8A65D, TK8P25DA, TK8S06K3L, TK9A45D, TK9A55DA, TK9A60D, TPC6008-H, TPC6009-H, AON6380, TPC6011, TPC6012, TPC6103, TPC6109-H, TPC6110, TPC6111, TPC6113, TPC6130