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TPC6010-H Spec and Replacement


   Type Designator: TPC6010-H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.4 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm
   Package: SOT6 VS6

 TPC6010-H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPC6010-H Specs

 ..1. Size:223K  toshiba
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TPC6010-H

TPC6010-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC6010-H TPC6010-H TPC6010-H TPC6010-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 2.7 nC(typ.) (4) Low... See More ⇒

 8.1. Size:211K  toshiba
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TPC6010-H

TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPC6012 Notebook PC Applications Portable Equipment Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 20 m (typ.) Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement mode Vth = 0.5 to 1.2 V (VDS = 10 V, ID ... See More ⇒

 8.2. Size:212K  toshiba
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TPC6010-H

TPC6011 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TPC6011 Notebook PC Applications Portable Equipment Applications Unit mm Low drain-source ON-resistance RDS (ON) = 16 m (typ.) ( VGS = 10V) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta ... See More ⇒

 9.1. Size:195K  toshiba
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TPC6010-H

TPC6007-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6007-H High-Efficiency DC/DC Converter Applications Unit mm Small footprint due to small and thin package High-speed switching Small gate charge Qsw = 1.8 nC (typ.) Low drain-source ON-resistance RDS (ON) = 40 m (typ.) High forward transfer admittance ... See More ⇒

Detailed specifications: TK8A65D , TK8P25DA , TK8S06K3L , TK9A45D , TK9A55DA , TK9A60D , TPC6008-H , TPC6009-H , AON6380 , TPC6011 , TPC6012 , TPC6103 , TPC6109-H , TPC6110 , TPC6111 , TPC6113 , TPC6130 .

History: CEM9435 | TPC8118 | IRFF210 | ME7632S

Keywords - TPC6010-H MOSFET specs

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