TPC6010-H Spec and Replacement
Type Designator: TPC6010-H
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 0.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 6.1
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 2.4
nS
Cossⓘ -
Output Capacitance: 95
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.063
Ohm
Package: SOT6 VS6
TPC6010-H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPC6010-H Specs
..1. Size:223K toshiba
tpc6010-h.pdf 
TPC6010-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC6010-H TPC6010-H TPC6010-H TPC6010-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 2.7 nC(typ.) (4) Low... See More ⇒
8.1. Size:211K toshiba
tpc6012.pdf 
TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPC6012 Notebook PC Applications Portable Equipment Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 20 m (typ.) Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement mode Vth = 0.5 to 1.2 V (VDS = 10 V, ID ... See More ⇒
8.2. Size:212K toshiba
tpc6011.pdf 
TPC6011 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TPC6011 Notebook PC Applications Portable Equipment Applications Unit mm Low drain-source ON-resistance RDS (ON) = 16 m (typ.) ( VGS = 10V) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta ... See More ⇒
9.1. Size:195K toshiba
tpc6007-h.pdf 
TPC6007-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6007-H High-Efficiency DC/DC Converter Applications Unit mm Small footprint due to small and thin package High-speed switching Small gate charge Qsw = 1.8 nC (typ.) Low drain-source ON-resistance RDS (ON) = 40 m (typ.) High forward transfer admittance ... See More ⇒
9.2. Size:225K toshiba
tpc6008-h.pdf 
TPC6008-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC6008-H TPC6008-H TPC6008-H TPC6008-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 0.9 nC (typ.) (4) Lo... See More ⇒
9.3. Size:198K toshiba
tpc6006-h.pdf 
TPC6006-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6006-H Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge Qsw = 2.4 nC (typ.) Low drain-source ON-resistance RDS (ON) = 59 m (typ.) High forward transfer... See More ⇒
9.4. Size:225K toshiba
tpc6009-h.pdf 
TPC6009-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC6009-H TPC6009-H TPC6009-H TPC6009-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 1.0 nC (typ.) (4) Lo... See More ⇒
9.5. Size:253K toshiba
tpc6005.pdf 
TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6005 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance R = 21 m (typ.) DS (ON) High forward transfer admittance Yfs = 10 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancementmode Vth = 0.5 to 1.2 V (VDS = ... See More ⇒
9.6. Size:224K toshiba
tpc6067.pdf 
TPC6067 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC6067 TPC6067 TPC6067 TPC6067 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 18 m (typ.) (VGS = 10 V) (3) Low leakage curren... See More ⇒
9.7. Size:200K toshiba
tpc6001.pdf 
TPC6001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6001 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 22 m (typ.) High forward transfer admittance Yfs = 15 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement mode Vth = 0.5 to 1.2 V (VDS = 10... See More ⇒
9.8. Size:230K toshiba
tpc6003.pdf 
TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6003 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 19 m (typ.) High forward transfer admittance Yfs = 7 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.5 V (VDS = 10... See More ⇒
9.9. Size:230K toshiba
tpc6004.pdf 
TPC6004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 19 m (typ.) High forward transfer admittance Yfs = 11 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement mode Vth = 0.5 to 1.2 V (VDS = 1... See More ⇒
9.10. Size:738K cn wuxi unigroup
tpp60r840c tpa60r840c tpu60r840c tpd60r840c tpc60r840c tpb60r840c.pdf 
TPP60R840C, TPA60R840C, TPU60R840C, TPD60R840C, TPC60R840C, TPB60R840C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package... See More ⇒
9.11. Size:865K cn wuxi unigroup
tpa60r240m tpb60r240m tpc60r240m tpp60r240m.pdf 
TPA60R240M, TPB60R240M, TPC60R240M, TPP60R240M Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device TPA60R240M TPB6... See More ⇒
9.12. Size:750K cn wuxi unigroup
tpp60r350c tpa60r350c tpu60r350c tpd60r350c tpc60r350c tpb60r350c.pdf 
TPP60R350C, TPA60R350C, TPU60R350C, TPD60R350C, TPC60R350C, TPB60R350C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package... See More ⇒
9.13. Size:741K cn wuxi unigroup
tpp60r580c tpa60r580c tpu60r580c tpd60r580c tpc60r580c tpb60r580c.pdf 
TPP60R580C, TPA60R580C, TPU60R580C, TPD60R580C, TPC60R580C,TPB60R580C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package ... See More ⇒
9.14. Size:608K cn wuxi unigroup
tpp60r150c tpa60r150c tpv60r150c tpc60r150c.pdf 
TPP60R150C, TPA60R150C, TPV60R150C, TPC60R150C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device P... See More ⇒
Detailed specifications: TK8A65D
, TK8P25DA
, TK8S06K3L
, TK9A45D
, TK9A55DA
, TK9A60D
, TPC6008-H
, TPC6009-H
, AON6380
, TPC6011
, TPC6012
, TPC6103
, TPC6109-H
, TPC6110
, TPC6111
, TPC6113
, TPC6130
.
History: CEM9435
| TPC8118
| IRFF210
| ME7632S
Keywords - TPC6010-H MOSFET specs
TPC6010-H cross reference
TPC6010-H equivalent finder
TPC6010-H lookup
TPC6010-H substitution
TPC6010-H replacement
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