BUK463-100A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK463-100A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
Paquete / Cubierta: SOT404

Búsqueda de reemplazo de MOSFET BUK463-100A

BUK463-100A Datasheet (PDF)

..1. Size:60K philips
buk463-100a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK463-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount Drain-source voltage 100 Vapplications. VDS Drain current (DC) 14 AThe device is intended for use in ID Total power dissipation 75 WSw

7.1. Size:57K philips
buk463-60a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK463-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK463 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain current (DC) 22 20 A(SMPS), motor

9.1. Size:60K philips
buk462-100a 2.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK462-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 100 Vapplications. ID Drain current (DC) 11 AThe device is intended for use in Ptot Total power dissipation 60

9.2. Size:57K philips
buk465-200a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK465-200AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 200 Vapplications. ID Drain current (DC) 14 AThe device is intended for use in Ptot Total power dissipation 125

9.3. Size:57K philips
buk465-100a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK465-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 100 Vapplications. ID Drain current (DC) 26 AThe device is intended for use in Ptot Total power dissipation 125

9.4. Size:60K philips
buk464-200a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK464-200AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 200 Vapplications. ID Drain current (DC) 9.2 AThe device is intended for use in Ptot Total power dissipation 90

9.5. Size:59K philips
buk465-60a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK465-60AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage -60Aapplications. ID Drain current (DC) 60 VThe device is intended for use in Ptot Total power dissipation 41 A

9.6. Size:57K philips
buk466-60a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK466-60AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 60 Vapplications. ID Drain current (DC) 52 AThe device is intended for use in Ptot Total power dissipation 150 W

9.7. Size:74K philips
buk465-60h 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK465-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 43 AThe device is intended for use in Ptot Total power dissipation 125

9.8. Size:56K philips
buk462-60a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK462-60A mGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 15 AThe device is intended for use in Ptot Total power dissipation 60

9.9. Size:53K philips
buk466-200a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK466-200AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for use in surface VDS Drain-source voltage 200 Vmount applications. ID Drain current (DC) 19 AThe device is intended for use in Ptot Total power dissipat

9.10. Size:54K philips
buk464-60h 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK464-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 41 AThe device is intended for use in Ptot Total power dissipation 125

9.11. Size:55K philips
buk466-100a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK466-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 100 Vapplications. ID Drain current (DC) 34 AThe device is intended for use in Ptot Total power dissipation 150

Otros transistores... BUK455-200A , BUK456-1000B , BUK456-100A , BUK456-200A , BUK456-200B , BUK456-800A , BUK456-800B , BUK462-100A , 7N65 , BUK465-100A , BUK465-200A , BUK466-200A , BUK473-100A , BUK473-100B , BUK482-100A , BUK543-100A , BUK545-100A .

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Recientemente añadidas las descripciónes de los transistores: