Philips Semiconductors Product specification PowerMOS transistor BUK463-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount Drain-source voltage 100 Vapplications. VDS Drain current (DC) 14 AThe device is intended for use in ID Total power dissipation 75 WSw

Philips Semiconductors Product Specification PowerMOS transistor BUK463-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK463 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain current (DC) 22 20 A(SMPS), motor

Philips Semiconductors Product specification PowerMOS transistor BUK462-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 100 Vapplications. ID Drain current (DC) 11 AThe device is intended for use in Ptot Total power dissipation 60

Philips Semiconductors Product specification PowerMOS transistor BUK465-200AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 200 Vapplications. ID Drain current (DC) 14 AThe device is intended for use in Ptot Total power dissipation 125

Philips Semiconductors Product specification PowerMOS transistor BUK465-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 100 Vapplications. ID Drain current (DC) 26 AThe device is intended for use in Ptot Total power dissipation 125

Philips Semiconductors Product specification PowerMOS transistor BUK464-200AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 200 Vapplications. ID Drain current (DC) 9.2 AThe device is intended for use in Ptot Total power dissipation 90

Philips Semiconductors Product specification PowerMOS transistor BUK465-60AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage -60Aapplications. ID Drain current (DC) 60 VThe device is intended for use in Ptot Total power dissipation 41 A

Philips Semiconductors Product specification PowerMOS transistor BUK466-60AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 60 Vapplications. ID Drain current (DC) 52 AThe device is intended for use in Ptot Total power dissipation 150 W

Philips Semiconductors Product specification PowerMOS transistor BUK465-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 43 AThe device is intended for use in Ptot Total power dissipation 125

Philips Semiconductors Product specification PowerMOS transistor BUK462-60A mGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 15 AThe device is intended for use in Ptot Total power dissipation 60

Philips Semiconductors Product specification PowerMOS transistor BUK466-200AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for use in surface VDS Drain-source voltage 200 Vmount applications. ID Drain current (DC) 19 AThe device is intended for use in Ptot Total power dissipat

Philips Semiconductors Product specification PowerMOS transistor BUK464-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 41 AThe device is intended for use in Ptot Total power dissipation 125

Philips Semiconductors Product specification PowerMOS transistor BUK466-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 100 Vapplications. ID Drain current (DC) 34 AThe device is intended for use in Ptot Total power dissipation 150