All MOSFET. BUK463-100A Datasheet

 

BUK463-100A MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK463-100A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm

Package: SOT404

BUK463-100A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK463-100A Datasheet (PDF)

1.1. buk463-100a 1.pdf Size:60K _philips

BUK463-100A
BUK463-100A

Philips Semiconductors Product specification PowerMOS transistor BUK463-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount Drain-source voltage 100 V applications. VDS Drain current (DC) 14 A The device is intended for use in ID Total power dissipation 75 W Switc

3.1. buk463-60a-b 1.pdf Size:57K _philips

BUK463-100A
BUK463-100A

Philips Semiconductors Product Specification PowerMOS transistor BUK463-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK463 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 22 20 A (SMPS), motor co

5.1. buk466-200a 1.pdf Size:53K _philips

BUK463-100A
BUK463-100A

Philips Semiconductors Product specification PowerMOS transistor BUK466-200A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for use in surface VDS Drain-source voltage 200 V mount applications. ID Drain current (DC) 19 A The device is intended for use in Ptot Total power dissipation

5.2. buk465-60h 1.pdf Size:74K _philips

BUK463-100A
BUK463-100A

Philips Semiconductors Product specification PowerMOS transistor BUK465-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 43 A The device is intended for use in Ptot Total power dissipation 125 W

5.3. buk464-60h 1.pdf Size:54K _philips

BUK463-100A
BUK463-100A

Philips Semiconductors Product specification PowerMOS transistor BUK464-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 41 A The device is intended for use in Ptot Total power dissipation 125 W

5.4. buk462-60a 1.pdf Size:56K _philips

BUK463-100A
BUK463-100A

Philips Semiconductors Product specification PowerMOS transistor BUK462-60A mGENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 15 A The device is intended for use in Ptot Total power dissipation 60 W

5.5. buk466-60a 1.pdf Size:57K _philips

BUK463-100A
BUK463-100A

Philips Semiconductors Product specification PowerMOS transistor BUK466-60A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 60 V applications. ID Drain current (DC) 52 A The device is intended for use in Ptot Total power dissipation 150 W S

5.6. buk462-100a 2.pdf Size:60K _philips

BUK463-100A
BUK463-100A

Philips Semiconductors Product specification PowerMOS transistor BUK462-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 100 V applications. ID Drain current (DC) 11 A The device is intended for use in Ptot Total power dissipation 60 W

5.7. buk465-60a 1.pdf Size:59K _philips

BUK463-100A
BUK463-100A

Philips Semiconductors Product specification PowerMOS transistor BUK465-60A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage -60A applications. ID Drain current (DC) 60 V The device is intended for use in Ptot Total power dissipation 41 A Sw

5.8. buk465-100a 1.pdf Size:57K _philips

BUK463-100A
BUK463-100A

Philips Semiconductors Product specification PowerMOS transistor BUK465-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 100 V applications. ID Drain current (DC) 26 A The device is intended for use in Ptot Total power dissipation 125 W

5.9. buk465-200a 1.pdf Size:57K _philips

BUK463-100A
BUK463-100A

Philips Semiconductors Product specification PowerMOS transistor BUK465-200A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 200 V applications. ID Drain current (DC) 14 A The device is intended for use in Ptot Total power dissipation 125 W

5.10. buk466-100a 1.pdf Size:55K _philips

BUK463-100A
BUK463-100A

Philips Semiconductors Product specification PowerMOS transistor BUK466-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 100 V applications. ID Drain current (DC) 34 A The device is intended for use in Ptot Total power dissipation 150 W

5.11. buk464-200a 1.pdf Size:60K _philips

BUK463-100A
BUK463-100A

Philips Semiconductors Product specification PowerMOS transistor BUK464-200A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 200 V applications. ID Drain current (DC) 9.2 A The device is intended for use in Ptot Total power dissipation 90 W

Datasheet: BUK455-200A , BUK456-1000B , BUK456-100A , BUK456-200A , BUK456-200B , BUK456-800A , BUK456-800B , BUK462-100A , IRFB3306 , BUK465-100A , BUK465-200A , BUK466-200A , BUK473-100A , BUK473-100B , BUK482-100A , BUK543-100A , BUK545-100A .

 


BUK463-100A
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