BUK465-200A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK465-200A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
Encapsulados: SOT404
Búsqueda de reemplazo de BUK465-200A MOSFET
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BUK465-200A datasheet
buk465-200a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK465-200A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 200 V applications. ID Drain current (DC) 14 A The device is intended for use in Ptot Total power dissipation 125
buk465-100a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK465-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 100 V applications. ID Drain current (DC) 26 A The device is intended for use in Ptot Total power dissipation 125
buk465-60a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK465-60A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage -60A applications. ID Drain current (DC) 60 V The device is intended for use in Ptot Total power dissipation 41 A
buk465-60h 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK465-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 43 A The device is intended for use in Ptot Total power dissipation 125
Otros transistores... BUK456-100A , BUK456-200A , BUK456-200B , BUK456-800A , BUK456-800B , BUK462-100A , BUK463-100A , BUK465-100A , 8205A , BUK466-200A , BUK473-100A , BUK473-100B , BUK482-100A , BUK543-100A , BUK545-100A , BUK545-100B , BUK552-100A .
History: BUK473-100A | BUK200-50X | BUK466-200A
History: BUK473-100A | BUK200-50X | BUK466-200A
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