BUK465-200A PDF and Equivalents Search

 

BUK465-200A Specs and Replacement


   Type Designator: BUK465-200A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: SOT404
 

 BUK465-200A substitution

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BUK465-200A datasheet

 ..1. Size:57K  philips
buk465-200a 1.pdf pdf_icon

BUK465-200A

Philips Semiconductors Product specification PowerMOS transistor BUK465-200A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 200 V applications. ID Drain current (DC) 14 A The device is intended for use in Ptot Total power dissipation 125... See More ⇒

 7.1. Size:57K  philips
buk465-100a 1.pdf pdf_icon

BUK465-200A

Philips Semiconductors Product specification PowerMOS transistor BUK465-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 100 V applications. ID Drain current (DC) 26 A The device is intended for use in Ptot Total power dissipation 125... See More ⇒

 7.2. Size:59K  philips
buk465-60a 1.pdf pdf_icon

BUK465-200A

Philips Semiconductors Product specification PowerMOS transistor BUK465-60A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage -60A applications. ID Drain current (DC) 60 V The device is intended for use in Ptot Total power dissipation 41 A ... See More ⇒

 7.3. Size:74K  philips
buk465-60h 1.pdf pdf_icon

BUK465-200A

Philips Semiconductors Product specification PowerMOS transistor BUK465-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 43 A The device is intended for use in Ptot Total power dissipation 125 ... See More ⇒

Detailed specifications: BUK456-100A , BUK456-200A , BUK456-200B , BUK456-800A , BUK456-800B , BUK462-100A , BUK463-100A , BUK465-100A , 8205A , BUK466-200A , BUK473-100A , BUK473-100B , BUK482-100A , BUK543-100A , BUK545-100A , BUK545-100B , BUK552-100A .

Keywords - BUK465-200A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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