BUK465-200A
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK465-200A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23
Ohm
Package:
SOT404
BUK465-200A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK465-200A
Datasheet (PDF)
..1. Size:57K philips
buk465-200a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK465-200AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 200 Vapplications. ID Drain current (DC) 14 AThe device is intended for use in Ptot Total power dissipation 125
7.1. Size:57K philips
buk465-100a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK465-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 100 Vapplications. ID Drain current (DC) 26 AThe device is intended for use in Ptot Total power dissipation 125
7.2. Size:59K philips
buk465-60a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK465-60AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage -60Aapplications. ID Drain current (DC) 60 VThe device is intended for use in Ptot Total power dissipation 41 A
7.3. Size:74K philips
buk465-60h 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK465-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 43 AThe device is intended for use in Ptot Total power dissipation 125
Datasheet: BUK456-100A
, BUK456-200A
, BUK456-200B
, BUK456-800A
, BUK456-800B
, BUK462-100A
, BUK463-100A
, BUK465-100A
, 7N65
, BUK466-200A
, BUK473-100A
, BUK473-100B
, BUK482-100A
, BUK543-100A
, BUK545-100A
, BUK545-100B
, BUK552-100A
.