BUK465-200A Datasheet. Specs and Replacement

Type Designator: BUK465-200A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: SOT404

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BUK465-200A datasheet

 ..1. Size:57K  philips
 buk465-200a 1.pdf pdf_icon

BUK465-200A

Philips Semiconductors Product specification PowerMOS transistor BUK465-200A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 200 V applications. ID Drain current (DC) 14 A The device is intended for use in Ptot Total power dissipation 125... See More ⇒

 7.1. Size:57K  philips
 buk465-100a 1.pdf pdf_icon

BUK465-200A

Philips Semiconductors Product specification PowerMOS transistor BUK465-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 100 V applications. ID Drain current (DC) 26 A The device is intended for use in Ptot Total power dissipation 125... See More ⇒

 7.2. Size:59K  philips
 buk465-60a 1.pdf pdf_icon

BUK465-200A

Philips Semiconductors Product specification PowerMOS transistor BUK465-60A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage -60A applications. ID Drain current (DC) 60 V The device is intended for use in Ptot Total power dissipation 41 A ... See More ⇒

 7.3. Size:74K  philips
 buk465-60h 1.pdf pdf_icon

BUK465-200A

Philips Semiconductors Product specification PowerMOS transistor BUK465-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 43 A The device is intended for use in Ptot Total power dissipation 125 ... See More ⇒

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Detailed specifications: BUK456-100A, BUK456-200A, BUK456-200B, BUK456-800A, BUK456-800B, BUK462-100A, BUK463-100A, BUK465-100A, IRF9540, BUK466-200A, BUK473-100A, BUK473-100B, BUK482-100A, BUK543-100A, BUK545-100A, BUK545-100B, BUK552-100A

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.