BUK465-200A Datasheet and Replacement. Cross Reference Search

BUK465-200A Datasheet (PDF)

..1. Size:57K philips
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Philips Semiconductors Product specification PowerMOS transistor BUK465-200AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 200 Vapplications. ID Drain current (DC) 14 AThe device is intended for use in Ptot Total power dissipation 125

7.1. Size:57K philips
buk465-100a 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK465-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 100 Vapplications. ID Drain current (DC) 26 AThe device is intended for use in Ptot Total power dissipation 125

7.2. Size:59K philips
buk465-60a 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK465-60AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage -60Aapplications. ID Drain current (DC) 60 VThe device is intended for use in Ptot Total power dissipation 41 A

7.3. Size:74K philips
buk465-60h 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK465-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 43 AThe device is intended for use in Ptot Total power dissipation 125

Datasheet: BUK456-100A , BUK456-200A , BUK456-200B , BUK456-800A , BUK456-800B , BUK462-100A , BUK463-100A , BUK465-100A , IRF630 , BUK466-200A , BUK473-100A , BUK473-100B , BUK482-100A , BUK543-100A , BUK545-100A , BUK545-100B , BUK552-100A .