TPCA8A09-H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPCA8A09-H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 70 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 51 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.3 nS

Cossⓘ - Capacitancia de salida: 1100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm

Encapsulados: SOP-ADVANCE

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TPCA8A09-H datasheet

 ..1. Size:253K  toshiba
 tpca8a09-h.pdf pdf_icon

TPCA8A09-H

TPCA8A09-H MOSFETs Silicon N-Channel MOS (U-MOS -H/Schottky Barrier Diode) TPCA8A09-H TPCA8A09-H TPCA8A09-H TPCA8A09-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Built-in a schottky barrier diode Low forward voltage VDSF = -0.6 V

 7.1. Size:214K  toshiba
 tpca8a01-h.pdf pdf_icon

TPCA8A09-H

TPCA8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS ) TPCA8A01-H High Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 0.4 0.1 1.27 0.5 0.1 0.05 M A 5 8 Portable Equipment Applications Built-in schottky barrier diode 0.15 0.05 Low forward voltage VDSF = -0.6

 7.2. Size:231K  toshiba
 tpca8a04-h.pdf pdf_icon

TPCA8A09-H

TPCA8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications 1.27 0.4 0.1 0.05 M A 8 5 Built-in a schottky barrier diode Low forward voltage VDSF = -0.6 V (max) 0.15 0.05 High-sp

 7.3. Size:223K  toshiba
 tpca8a05-h.pdf pdf_icon

TPCA8A09-H

TPCA8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A05-H High Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 Built-in a schottky barrier diode 0.15 0.05 Low forward voltage V = 0.6 V (max) DSF High

MOSTRAR MÁS

Otros transistores... TPCA8109, TPCA8120, TPCA8128, TPCA8131, TPCA8A02-H, TPCA8A04-H, TPCA8A05-H, TPCA8A08-H, 5N60, TPCA8A10-H, TPCA8A11-H, TPCC8007, TPCC8008, TPCC8009, TPCC8061-H, TPCC8062-H, TPCC8064-H