TPCA8A09-H Specs and Replacement
Type Designator: TPCA8A09-H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 51 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.3 nS
Cossⓘ - Output Capacitance: 1100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
Package: SOP-ADVANCE
TPCA8A09-H substitution
- MOSFET ⓘ Cross-Reference Search
TPCA8A09-H datasheet
tpca8a09-h.pdf
TPCA8A09-H MOSFETs Silicon N-Channel MOS (U-MOS -H/Schottky Barrier Diode) TPCA8A09-H TPCA8A09-H TPCA8A09-H TPCA8A09-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Built-in a schottky barrier diode Low forward voltage VDSF = -0.6 V... See More ⇒
tpca8a01-h.pdf
TPCA8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS ) TPCA8A01-H High Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 0.4 0.1 1.27 0.5 0.1 0.05 M A 5 8 Portable Equipment Applications Built-in schottky barrier diode 0.15 0.05 Low forward voltage VDSF = -0.6... See More ⇒
tpca8a04-h.pdf
TPCA8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications 1.27 0.4 0.1 0.05 M A 8 5 Built-in a schottky barrier diode Low forward voltage VDSF = -0.6 V (max) 0.15 0.05 High-sp... See More ⇒
tpca8a05-h.pdf
TPCA8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A05-H High Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 Built-in a schottky barrier diode 0.15 0.05 Low forward voltage V = 0.6 V (max) DSF High... See More ⇒
Detailed specifications: TPCA8109, TPCA8120, TPCA8128, TPCA8131, TPCA8A02-H, TPCA8A04-H, TPCA8A05-H, TPCA8A08-H, 5N60, TPCA8A10-H, TPCA8A11-H, TPCC8007, TPCC8008, TPCC8009, TPCC8061-H, TPCC8062-H, TPCC8064-H
Keywords - TPCA8A09-H MOSFET specs
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History: IXTX120P20T
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