BUK482-100A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK482-100A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Id|ⓘ - Corriente continua de drenaje: 1.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Encapsulados: SOT223
Búsqueda de reemplazo de BUK482-100A MOSFET
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BUK482-100A datasheet
buk482-100a 2.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK482-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 100 V mount applications. ID Drain current (DC) 1.8 A The device is intended for use in Ptot Total power dissipation 1
buk482-200a 2.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK482-200A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 200 V mounting featuring high avalanche ID Drain current (DC) 2.0 A energy capability, stable blocking Ptot Total powe
buk482-60a 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK482-60A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 2.7 A The device is intended for use in Ptot Total power dissipation 1.7
buk481-60a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK481-60A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 1.6 A The device is intended for use in Ptot Total power dissipation 1.5
Otros transistores... BUK456-800B , BUK462-100A , BUK463-100A , BUK465-100A , BUK465-200A , BUK466-200A , BUK473-100A , BUK473-100B , IRF9540 , BUK543-100A , BUK545-100A , BUK545-100B , BUK552-100A , BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B .
History: BUK104-50SP
History: BUK104-50SP
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