BUK482-100A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK482-100A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1.8 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
Тип корпуса: SOT223
Аналог (замена) для BUK482-100A
BUK482-100A Datasheet (PDF)
buk482-100a 2.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK482-100A GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 100 Vmount applications. ID Drain current (DC) 1.8 AThe device is intended for use in Ptot Total power dissipation 1
buk482-200a 2.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK482-200A GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 200 Vmounting featuring high avalanche ID Drain current (DC) 2.0 Aenergy capability, stable blocking Ptot Total powe
buk482-60a 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK482-60A GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 2.7 AThe device is intended for use in Ptot Total power dissipation 1.7
buk481-60a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK481-60A GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 1.6 AThe device is intended for use in Ptot Total power dissipation 1.5
buk483-60a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK483-60A GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 3.2 AThe device is intended for use in Ptot Total power dissipation 1.8
Другие MOSFET... BUK456-800B , BUK462-100A , BUK463-100A , BUK465-100A , BUK465-200A , BUK466-200A , BUK473-100A , BUK473-100B , IRF9540 , BUK543-100A , BUK545-100A , BUK545-100B , BUK552-100A , BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B .
Список транзисторов
Обновления
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