BUK482-100A - параметры транзистора MOSFET, его аналоги, datasheet

BUK482-100A Datasheet (PDF)

..1. Size:53K philips
buk482-100a 2.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK482-100A GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 100 Vmount applications. ID Drain current (DC) 1.8 AThe device is intended for use in Ptot Total power dissipation 1

7.1. Size:52K philips
buk482-200a 2.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK482-200A GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 200 Vmounting featuring high avalanche ID Drain current (DC) 2.0 Aenergy capability, stable blocking Ptot Total powe

7.2. Size:60K philips
buk482-60a 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK482-60A GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 2.7 AThe device is intended for use in Ptot Total power dissipation 1.7

9.1. Size:56K philips
buk481-60a 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK481-60A GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 1.6 AThe device is intended for use in Ptot Total power dissipation 1.5