BUK482-100A - аналоги, параметры транзистора - Справочник транзисторов

BUK482-100A даташит

..1. Size:53K philips
buk482-100a 2.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK482-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 100 V mount applications. ID Drain current (DC) 1.8 A The device is intended for use in Ptot Total power dissipation 1

7.1. Size:52K philips
buk482-200a 2.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK482-200A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 200 V mounting featuring high avalanche ID Drain current (DC) 2.0 A energy capability, stable blocking Ptot Total powe

7.2. Size:60K philips
buk482-60a 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK482-60A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 2.7 A The device is intended for use in Ptot Total power dissipation 1.7

9.1. Size:56K philips
buk481-60a 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK481-60A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 1.6 A The device is intended for use in Ptot Total power dissipation 1.5