All MOSFET. BUK482-100A Datasheet

 

BUK482-100A Datasheet and Replacement


   Type Designator: BUK482-100A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: SOT223
 

 BUK482-100A substitution

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BUK482-100A Datasheet (PDF)

 ..1. Size:53K  philips
buk482-100a 2.pdf pdf_icon

BUK482-100A

Philips Semiconductors Product Specification PowerMOS transistor BUK482-100A GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 100 Vmount applications. ID Drain current (DC) 1.8 AThe device is intended for use in Ptot Total power dissipation 1

 7.1. Size:52K  philips
buk482-200a 2.pdf pdf_icon

BUK482-100A

Philips Semiconductors Product specification PowerMOS transistor BUK482-200A GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 200 Vmounting featuring high avalanche ID Drain current (DC) 2.0 Aenergy capability, stable blocking Ptot Total powe

 7.2. Size:60K  philips
buk482-60a 1.pdf pdf_icon

BUK482-100A

Philips Semiconductors Product Specification PowerMOS transistor BUK482-60A GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 2.7 AThe device is intended for use in Ptot Total power dissipation 1.7

 9.1. Size:56K  philips
buk481-60a 1.pdf pdf_icon

BUK482-100A

Philips Semiconductors Product specification PowerMOS transistor BUK481-60A GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 1.6 AThe device is intended for use in Ptot Total power dissipation 1.5

Datasheet: BUK456-800B , BUK462-100A , BUK463-100A , BUK465-100A , BUK465-200A , BUK466-200A , BUK473-100A , BUK473-100B , K3569 , BUK543-100A , BUK545-100A , BUK545-100B , BUK552-100A , BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B .

Keywords - BUK482-100A MOSFET datasheet

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