BUK482-100A MOSFET Datasheet: N-Ch, 100V, 1.8A. Full specification with pinout and replacement list

BUK482-100A Specs and Replacement

Type Designator: BUK482-100A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Id| ⓘ - Maximum Drain Current: 1.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: SOT223

BUK482-100A substitution

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BUK482-100A datasheet

..1. Size:53K philips
buk482-100a 2.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK482-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 100 V mount applications. ID Drain current (DC) 1.8 A The device is intended for use in Ptot Total power dissipation 1... See More ⇒

7.1. Size:52K philips
buk482-200a 2.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK482-200A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 200 V mounting featuring high avalanche ID Drain current (DC) 2.0 A energy capability, stable blocking Ptot Total powe... See More ⇒

7.2. Size:60K philips
buk482-60a 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK482-60A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 2.7 A The device is intended for use in Ptot Total power dissipation 1.7... See More ⇒

9.1. Size:56K philips
buk481-60a 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK481-60A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 1.6 A The device is intended for use in Ptot Total power dissipation 1.5... See More ⇒