BUK482-100A
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK482-100A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 1.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28
Ohm
Package:
SOT223
BUK482-100A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK482-100A
Datasheet (PDF)
..1. Size:53K philips
buk482-100a 2.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK482-100A GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 100 Vmount applications. ID Drain current (DC) 1.8 AThe device is intended for use in Ptot Total power dissipation 1
7.1. Size:52K philips
buk482-200a 2.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK482-200A GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 200 Vmounting featuring high avalanche ID Drain current (DC) 2.0 Aenergy capability, stable blocking Ptot Total powe
7.2. Size:60K philips
buk482-60a 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK482-60A GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 2.7 AThe device is intended for use in Ptot Total power dissipation 1.7
9.1. Size:56K philips
buk481-60a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK481-60A GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 1.6 AThe device is intended for use in Ptot Total power dissipation 1.5
9.2. Size:57K philips
buk483-60a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK483-60A GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 3.2 AThe device is intended for use in Ptot Total power dissipation 1.8
Datasheet: BUK456-800B
, BUK462-100A
, BUK463-100A
, BUK465-100A
, BUK465-200A
, BUK466-200A
, BUK473-100A
, BUK473-100B
, K3569
, BUK543-100A
, BUK545-100A
, BUK545-100B
, BUK552-100A
, BUK552-100B
, BUK553-100A
, BUK555-100A
, BUK555-100B
.
