TPCC8104 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPCC8104
   Código: 8104
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 58 nC
   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 485 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0088 Ohm
   Paquete / Cubierta: TSON-ADVANCE

Búsqueda de reemplazo de MOSFET TPCC8104

TPCC8104 Datasheet (PDF)

..1. Size:231K toshiba
tpcc8104.pdf

TPCC8104MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8104TPCC8104TPCC8104TPCC81041. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 6.8 m (typ.) (V

7.1. Size:237K toshiba
tpcc8107.pdf

TPCC8107MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8107TPCC8107TPCC8107TPCC81071. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 23.5 m (typ.) (VGS = -10 V)(3) Low

7.2. Size:234K toshiba
tpcc8106.pdf

TPCC8106MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8106TPCC8106TPCC8106TPCC81061. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 9.5 m (typ.) (VGS = -10 V)(3) Low

7.3. Size:223K toshiba
tpcc8102.pdf

TPCC8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS) TPCC8102 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 14.5 m (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 t

7.4. Size:219K toshiba
tpcc8103.pdf

TPCC8103 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS) TPCC8103 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 9.4 m (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to

7.5. Size:218K toshiba
tpcc8105.pdf

TPCC8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS) TPCC8105 Lithium Ion Battery Applications Unit: mmPower Management Switch Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 6.0 m (typ.)( VGS = -10 V) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: V

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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