TPCC8104
MOSFET. Datasheet pdf. Equivalent
Type Designator: TPCC8104
Marking Code: 8104
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 27
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 58
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 485
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088
Ohm
Package:
TSON-ADVANCE
TPCC8104
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPCC8104
Datasheet (PDF)
..1. Size:231K toshiba
tpcc8104.pdf 
TPCC8104MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8104TPCC8104TPCC8104TPCC81041. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 6.8 m (typ.) (V
7.1. Size:237K toshiba
tpcc8107.pdf
TPCC8107MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8107TPCC8107TPCC8107TPCC81071. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 23.5 m (typ.) (VGS = -10 V)(3) Low
7.2. Size:234K toshiba
tpcc8106.pdf
TPCC8106MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8106TPCC8106TPCC8106TPCC81061. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 9.5 m (typ.) (VGS = -10 V)(3) Low
7.3. Size:223K toshiba
tpcc8102.pdf
TPCC8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS) TPCC8102 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 14.5 m (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 t
7.4. Size:219K toshiba
tpcc8103.pdf
TPCC8103 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS) TPCC8103 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 9.4 m (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to
7.5. Size:218K toshiba
tpcc8105.pdf
TPCC8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS) TPCC8105 Lithium Ion Battery Applications Unit: mmPower Management Switch Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 6.0 m (typ.)( VGS = -10 V) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: V
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