TPCC8104 Specs and Replacement

Type Designator: TPCC8104

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 485 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm

Package: TSON-ADVANCE

TPCC8104 substitution

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TPCC8104 datasheet

 ..1. Size:231K  toshiba
tpcc8104.pdf pdf_icon

TPCC8104

TPCC8104 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8104 TPCC8104 TPCC8104 TPCC8104 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 6.8 m (typ.) (V... See More ⇒

 7.1. Size:237K  toshiba
tpcc8107.pdf pdf_icon

TPCC8104

TPCC8107 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8107 TPCC8107 TPCC8107 TPCC8107 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 23.5 m (typ.) (VGS = -10 V) (3) Low... See More ⇒

 7.2. Size:234K  toshiba
tpcc8106.pdf pdf_icon

TPCC8104

TPCC8106 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8106 TPCC8106 TPCC8106 TPCC8106 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 9.5 m (typ.) (VGS = -10 V) (3) Low ... See More ⇒

 7.3. Size:223K  toshiba
tpcc8102.pdf pdf_icon

TPCC8104

TPCC8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCC8102 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 14.5 m (typ.) (VGS = -10 V) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 t... See More ⇒

Detailed specifications: TPCC8067-H, TPCC8068-H, TPCC8073, TPCC8074, TPCC8076, TPCC8084, TPCC8093, TPCC8103, IRFZ48N, TPCC8105, TPCC8131, TPCC8A01-H, TPCF8002, TPCF8003, TPCF8004, TPCF8101, TPCF8105

Keywords - TPCC8104 MOSFET specs

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