TPCC8131 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCC8131
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.2 nS
Cossⓘ - Capacitancia de salida: 320 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0176 Ohm
Paquete / Cubierta: TSON-ADVANCE
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TPCC8131 Datasheet (PDF)
tpcc8131.pdf

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tpcc8138.pdf

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tpcc8136.pdf

TPCC8136MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8136TPCC8136TPCC8136TPCC81361. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 13 m (typ.) (VGS = -4.5 V)(3) Low leakage current:
Otros transistores... TPCC8073 , TPCC8074 , TPCC8076 , TPCC8084 , TPCC8093 , TPCC8103 , TPCC8104 , TPCC8105 , IRF1405 , TPCC8A01-H , TPCF8002 , TPCF8003 , TPCF8004 , TPCF8101 , TPCF8105 , TPCF8107 , TPCF8108 .



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