TPCC8131 Todos los transistores

 

TPCC8131 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCC8131
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0176 Ohm
   Paquete / Cubierta: TSON-ADVANCE
 

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TPCC8131 Datasheet (PDF)

 ..1. Size:234K  toshiba
 tpcc8131.pdf pdf_icon

TPCC8131

TPCC8131MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8131TPCC8131TPCC8131TPCC81311. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 13.5 m (typ.) (VGS = -10 V)(3) Low leakag

 7.1. Size:230K  toshiba
 tpcc8137.pdf pdf_icon

TPCC8131

TPCC8137MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8137TPCC8137TPCC8137TPCC81371. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 8.0 m (typ.) (VGS = -4.5 V)(3) Low leakage current: IDSS = -10 A (max) (VDS

 7.2. Size:232K  toshiba
 tpcc8138.pdf pdf_icon

TPCC8131

TPCC8138MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8138TPCC8138TPCC8138TPCC81381. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 6.0 m (typ.) (VGS = -4.5 V)(3) Low leakage current: IDSS = -10 A (max) (VDS

 7.3. Size:231K  toshiba
 tpcc8136.pdf pdf_icon

TPCC8131

TPCC8136MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8136TPCC8136TPCC8136TPCC81361. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 13 m (typ.) (VGS = -4.5 V)(3) Low leakage current:

MOSTRAR MÁS

Otros transistores... TPCC8073 , TPCC8074 , TPCC8076 , TPCC8084 , TPCC8093 , TPCC8103 , TPCC8104 , TPCC8105 , P0903BDG , TPCC8A01-H , TPCF8002 , TPCF8003 , TPCF8004 , TPCF8101 , TPCF8105 , TPCF8107 , TPCF8108 .

History: DH16N06 | HAT1054R | DH1K1N10I

 

 
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