TPCC8131 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCC8131
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.2 nS
Cossⓘ - Capacitancia de salida: 320 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0176 Ohm
Encapsulados: TSON-ADVANCE
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TPCC8131 datasheet
tpcc8131.pdf
TPCC8131 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8131 TPCC8131 TPCC8131 TPCC8131 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 13.5 m (typ.) (VGS = -10 V) (3) Low leakag
tpcc8137.pdf
TPCC8137 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8137 TPCC8137 TPCC8137 TPCC8137 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 8.0 m (typ.) (VGS = -4.5 V) (3) Low leakage current IDSS = -10 A (max) (VDS
tpcc8138.pdf
TPCC8138 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8138 TPCC8138 TPCC8138 TPCC8138 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 6.0 m (typ.) (VGS = -4.5 V) (3) Low leakage current IDSS = -10 A (max) (VDS
tpcc8136.pdf
TPCC8136 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8136 TPCC8136 TPCC8136 TPCC8136 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 13 m (typ.) (VGS = -4.5 V) (3) Low leakage current
Otros transistores... TPCC8073, TPCC8074, TPCC8076, TPCC8084, TPCC8093, TPCC8103, TPCC8104, TPCC8105, IRF830, TPCC8A01-H, TPCF8002, TPCF8003, TPCF8004, TPCF8101, TPCF8105, TPCF8107, TPCF8108
History: PE674DT
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