TPCC8131 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPCC8131
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 20 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 5.2 ns
Cossⓘ - Выходная емкость: 320 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0176 Ohm
Тип корпуса: TSON-ADVANCE
- подбор MOSFET транзистора по параметрам
TPCC8131 Datasheet (PDF)
tpcc8131.pdf

TPCC8131MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8131TPCC8131TPCC8131TPCC81311. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 13.5 m (typ.) (VGS = -10 V)(3) Low leakag
tpcc8137.pdf

TPCC8137MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8137TPCC8137TPCC8137TPCC81371. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 8.0 m (typ.) (VGS = -4.5 V)(3) Low leakage current: IDSS = -10 A (max) (VDS
tpcc8138.pdf

TPCC8138MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8138TPCC8138TPCC8138TPCC81381. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 6.0 m (typ.) (VGS = -4.5 V)(3) Low leakage current: IDSS = -10 A (max) (VDS
tpcc8136.pdf

TPCC8136MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8136TPCC8136TPCC8136TPCC81361. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 13 m (typ.) (VGS = -4.5 V)(3) Low leakage current:
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IRFI9520N | BF964S | SST65R360S2 | BSC032N03SG | RCX100N25 | IRF6100PBF | APT66M60B2
History: IRFI9520N | BF964S | SST65R360S2 | BSC032N03SG | RCX100N25 | IRF6100PBF | APT66M60B2



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