TPCC8131 Specs and Replacement

Type Designator: TPCC8131

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0176 Ohm

Package: TSON-ADVANCE

TPCC8131 substitution

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TPCC8131 datasheet

 ..1. Size:234K  toshiba
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TPCC8131

TPCC8131 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8131 TPCC8131 TPCC8131 TPCC8131 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 13.5 m (typ.) (VGS = -10 V) (3) Low leakag... See More ⇒

 7.1. Size:230K  toshiba
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TPCC8131

TPCC8137 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8137 TPCC8137 TPCC8137 TPCC8137 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 8.0 m (typ.) (VGS = -4.5 V) (3) Low leakage current IDSS = -10 A (max) (VDS ... See More ⇒

 7.2. Size:232K  toshiba
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TPCC8131

TPCC8138 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8138 TPCC8138 TPCC8138 TPCC8138 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 6.0 m (typ.) (VGS = -4.5 V) (3) Low leakage current IDSS = -10 A (max) (VDS ... See More ⇒

 7.3. Size:231K  toshiba
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TPCC8131

TPCC8136 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8136 TPCC8136 TPCC8136 TPCC8136 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 13 m (typ.) (VGS = -4.5 V) (3) Low leakage current ... See More ⇒

Detailed specifications: TPCC8073, TPCC8074, TPCC8076, TPCC8084, TPCC8093, TPCC8103, TPCC8104, TPCC8105, IRF830, TPCC8A01-H, TPCF8002, TPCF8003, TPCF8004, TPCF8101, TPCF8105, TPCF8107, TPCF8108

Keywords - TPCC8131 MOSFET specs

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