2SJ618 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ618
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 130 W
Tensión drenaje-fuente (Vds): 180 V
Corriente continua de drenaje (Id): 10 A
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 0.15 Ohm
Empaquetado / Estuche: TO3P
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2SJ618 Datasheet (PDF)
5.1. 2sj610.pdf 
Size:331K _toshiba
2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (?-MOSV) 2SJ610 Switching Regulator, DC-DC Converter and Unit: mm Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.85 ? (typ.) • High forward transfer admittance: |Y | = 18 S (typ.) fs • Low leakage current: I = -100 µA (V = -250 V) DSS DS • Enhancement-mode: V = -1.5~-3.5 V (V
5.2. 2sj619.pdf Size:314K _toshiba
2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-?-MOSV) 2SJ619 Switching Regulator and DC-DC Converter Applications Unit: mm Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: R = 0.15 ? (typ.) DS (ON) • High forward transfer admittance: ?Y ? = 7.7 S (typ.) fs • Low leakage current: IDSS = -100 µA (max) (V = -100 V)
5.3. 2sj612.pdf Size:28K _sanyo
Ordering number : ENN7178 2SJ612 P-Channel Silicon MOSFET 2SJ612 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 2.5V drive. [2SJ612] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 : Gate 0.75 2 : Drain 3 : Source Specifications SANYO : PCP Absolute Maximum Ratings at
5.4. 2sj616.pdf Size:32K _sanyo
Ordering number : ENN7270 2SJ616 P-Channel Silicon MOSFET 2SJ616 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 4V drive. [2SJ616] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 : Gate 0.75 2 : Drain 3 : Source Specifications SANYO : PCP Absolute Maximum Ratings at Ta
5.5. 2sj615.pdf Size:28K _sanyo
Ordering number : ENN7179 2SJ615 P-Channel Silicon MOSFET 2SJ615 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 4V drive. [2SJ615] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 : Gate 0.75 2 : Drain 3 : Source Specifications SANYO : PCP Absolute Maximum Ratings at T
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
