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2SJ618 Spec and Replacement


   Type Designator: 2SJ618
   Marking Code: J618
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 180 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO3P

 2SJ618 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ618 Specs

 ..1. Size:143K  1
 2sj618.pdf pdf_icon

2SJ618

2SJ618 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type( -MOS ) 2SJ618 High-Power Amplifier Applications Unit mm 15.9 MAX. 3.2 0.2 High breakdown voltage VDSS = -180 V Complementary to 2SK3497 2.0 0.3 1.0 0.3 0.25 5.45 0.2 5.45 0.2 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit 1 2 3 Drain-source v... See More ⇒

 9.1. Size:331K  toshiba
 2sj610.pdf pdf_icon

2SJ618

2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( -MOSV) 2SJ610 Switching Regulator, DC-DC Converter and Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 1.85 (typ.) High forward transfer admittance Y = 18 S (typ.) fs Low leakage current I = -100 A (V = -250 V) DSS DS Enhancement-mode V = -1.5 -3.5 V... See More ⇒

 9.2. Size:314K  toshiba
 2sj619.pdf pdf_icon

2SJ618

2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ619 Switching Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications 4-V gate drive Low drain-source ON resistance R = 0.15 (typ.) DS (ON) High forward transfer admittance Y = 7.7 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -10... See More ⇒

 9.3. Size:32K  sanyo
 2sj616.pdf pdf_icon

2SJ618

Ordering number ENN7270 2SJ616 P-Channel Silicon MOSFET 2SJ616 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A 4V drive. [2SJ616] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 Gate 0.75 2 Drain 3 Source Specifications SANYO PCP Absolute Maximum Rati... See More ⇒

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Detailed specifications: 2SJ440 , 2SJ464 , 2SJ507 , 2SJ508 , 2SJ509 , 2SJ512 , 2SJ516 , 2SJ525 , IRF530 , 2SJ619 , 2SJ620 , 2SJ669 , 2SJ676 , 2SK1119 , 2SK1120 , 2SK1381 , 2SK1382 .

Keywords - 2SJ618 MOSFET specs

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