2SJ618 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SJ618
Маркировка: J618
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 130 W
Предельно допустимое напряжение сток-исток |Uds|: 180 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.1 V
Максимально допустимый постоянный ток стока |Id|: 10 A
Максимальная температура канала (Tj): 150 °C
Выходная емкость (Cd): 330 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.15 Ohm
Тип корпуса: TO3P
2SJ618 Datasheet (PDF)
2sj618.pdf
2SJ618 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOS) 2SJ618 High-Power Amplifier Applications Unit: mm15.9 MAX. 3.2 0.2 High breakdown voltage: VDSS = -180 V Complementary to 2SK3497 2.0 0.3 1.0 0.3 0.25 5.45 0.2 5.45 0.2 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit1 2 3 Drain-source v
2sj610.pdf
2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV) 2SJ610 Switching Regulator, DC-DC Converter and Unit: mm Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 1.85 (typ.) High forward transfer admittance: |Y | = 18 S (typ.) fs Low leakage current: I = -100 A (V = -250 V) DSS DS Enhancement-mode: V = -1.5~-3.5 V
2sj619.pdf
2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ619 Switching Regulator and DC-DC Converter Applications Unit: mm Motor Drive Applications 4-V gate drive Low drain-source ON resistance: R = 0.15 (typ.) DS (ON) High forward transfer admittance: Y = 7.7 S (typ.) fs Low leakage current: IDSS = -100 A (max) (V = -10
2sj616.pdf
Ordering number : ENN72702SJ616P-Channel Silicon MOSFET2SJ616Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 4V drive.[2SJ616]4.51.51.60.4 0.53 2 10.41.53.0(Bottom view)1 : Gate0.75 2 : Drain3 : SourceSpecificationsSANYO : PCPAbsolute Maximum Rati
2sj612.pdf
Ordering number : ENN71782SJ612P-Channel Silicon MOSFET2SJ612Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 2.5V drive.[2SJ612]4.51.51.60.4 0.53 2 10.41.53.0(Bottom view)1 : Gate0.752 : Drain3 : SourceSpecificationsSANYO : PCPAbsolute Maximum R
2sj615.pdf
Ordering number : ENN71792SJ615P-Channel Silicon MOSFET2SJ615Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 4V drive.[2SJ615]4.51.51.60.4 0.53 2 10.41.53.0(Bottom view)1 : Gate0.752 : Drain3 : SourceSpecificationsSANYO : PCPAbsolute Maximum Rat
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