2SJ669 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ669  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm

Encapsulados: TPS

  📄📄 Copiar 

 Búsqueda de reemplazo de 2SJ669 MOSFET

- Selecciónⓘ de transistores por parámetros

 

2SJ669 datasheet

 ..1. Size:209K  toshiba
 2sj669.pdf pdf_icon

2SJ669

2SJ669 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) 2SJ669 Relay Drive, DC/DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON-resistance RDS (ON) = 0.12 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = -100 A (max) (VDS = -60 V) Enhancement mode Vth = -0.8

 9.1. Size:204K  toshiba
 2sj668.pdf pdf_icon

2SJ669

2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON-resistance RDS (ON) = 0.12 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = -100 A (max) (VDS = -60 V) Enhancement mode Vth = -0.8 t

 9.2. Size:38K  sanyo
 2sj665.pdf pdf_icon

2SJ669

Ordering number EN8590 2SJ665 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ665 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --

 9.3. Size:38K  sanyo
 2sj661.pdf pdf_icon

2SJ669

Ordering number EN8586 2SJ661 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ661 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --

MOSTRAR MÁS

Otros transistores... 2SJ508, 2SJ509, 2SJ512, 2SJ516, 2SJ525, 2SJ618, 2SJ619, 2SJ620, AO4407A, 2SJ676, 2SK1119, 2SK1120, 2SK1381, 2SK1382, 2SK1486, 2SK1529, 2SK1530