2SJ669 Todos los transistores

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2SJ669 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ669

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.2 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 5 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.17 Ohm

Empaquetado / Estuche: TPS

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2SJ669 Datasheet (PDF)

1.1. 2sj669.pdf Size:209K _toshiba

2SJ669
2SJ669

2SJ669 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) 2SJ669 Relay Drive, DC/DC Converter and Motor Drive Unit: mm Applications 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 ? (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 ?A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 to -2.

5.1. 2sj661-1e.pdf Size:283K _upd

2SJ669
2SJ669

Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET http://onsemi.com – – Ω 60V, 38A, 39m , TO-262-3L/TO-263-2L Features • ON-resistance RDS(on)1=29.5m (typ.) • Input capacitance Ciss=4360pF (typ.) Ω • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage

5.2. 2sj668.pdf Size:204K _toshiba

2SJ669
2SJ669

2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 ? (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 ?A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 to -2.0

5.3. 2sj665.pdf Size:38K _sanyo

2SJ669
2SJ669

Ordering number : EN8590 2SJ665 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ665 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --100 V Gate-to

5.4. 2sj661.pdf Size:38K _sanyo

2SJ669
2SJ669

Ordering number : EN8586 2SJ661 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ661 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-

Otros transistores... 2SJ508 , 2SJ509 , 2SJ512 , 2SJ516 , 2SJ525 , 2SJ618 , 2SJ619 , 2SJ620 , J112 , 2SJ676 , 2SK1119 , 2SK1120 , 2SK1381 , 2SK1382 , 2SK1486 , 2SK1529 , 2SK1530 .

 


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