All MOSFET. 2SJ669 Datasheet

 

2SJ669 Datasheet and Replacement


   Type Designator: 2SJ669
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TPS
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2SJ669 Datasheet (PDF)

 ..1. Size:209K  toshiba
 2sj669.pdf pdf_icon

2SJ669

2SJ669 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) 2SJ669 Relay Drive, DC/DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8

 9.1. Size:204K  toshiba
 2sj668.pdf pdf_icon

2SJ669

2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Unit: mmApplications 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 t

 9.2. Size:38K  sanyo
 2sj665.pdf pdf_icon

2SJ669

Ordering number : EN8590 2SJ665P-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ665ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --

 9.3. Size:38K  sanyo
 2sj661.pdf pdf_icon

2SJ669

Ordering number : EN8586 2SJ661P-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ661ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --

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Keywords - 2SJ669 MOSFET datasheet

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