2SK1530 Todos los transistores

 ..1. Size:382K  toshiba
 2sk1530.pdf

2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit mm High-Power Amplifier Application High breakdown voltage VDSS = 200 V High forward transfer admittance Yfs = 5.0 S (typ.) Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Gate-source voltage VGSS 20 V

 8.1. Size:327K  toshiba
 2sk1531.pdf

 8.2. Size:145K  shindengen
 2sk1534.pdf

 8.3. Size:156K  shindengen
 2sk1536.pdf

 8.4. Size:152K  shindengen
 2sk1537.pdf

 8.5. Size:147K  shindengen
 2sk1539.pdf

 8.6. Size:156K  shindengen
 2sk1538.pdf

 8.7. Size:209K  shindengen
 2sk1535.pdf

2SK1535 2SK1535

 8.8. Size:213K  inchange semiconductor
 2sk1534.pdf

isc N-Channel MOSFET Transistor 2SK1534 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and soleno

 8.9. Size:217K  inchange semiconductor
 2sk1531.pdf

isc N-Channel MOSFET Transistor 2SK1531 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr