2SK1530 Datasheet and Replacement
Type Designator: 2SK1530
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO3P
2SK1530 substitution
2SK1530 Datasheet (PDF)
2sk1530.pdf
2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mmHigh-Power Amplifier Application High breakdown voltage : VDSS = 200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 200 VGate-source voltage VGSS 20 V
Datasheet: 2SJ669 , 2SJ676 , 2SK1119 , 2SK1120 , 2SK1381 , 2SK1382 , 2SK1486 , 2SK1529 , RFP50N06 , 2SK1544 , 2SK1930 , 2SK2013 , 2SK2162 , 2SK2173 , 2SK2200 , 2SK2201 , 2SK2229 .
History: SWD15N65J | TMW20N65HG | SM5A27NSFP | SWD13N60K2 | 2SK211
Keywords - 2SK1530 MOSFET datasheet
2SK1530 cross reference
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History: SWD15N65J | TMW20N65HG | SM5A27NSFP | SWD13N60K2 | 2SK211
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