2SK1530
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1530
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.8
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 180
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2
Ohm
Package:
TO3P
2SK1530
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1530
Datasheet (PDF)
..1. Size:382K toshiba
2sk1530.pdf 
2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mmHigh-Power Amplifier Application High breakdown voltage : VDSS = 200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 200 VGate-source voltage VGSS 20 V
8.8. Size:213K inchange semiconductor
2sk1534.pdf
isc N-Channel MOSFET Transistor 2SK1534DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and soleno
8.9. Size:217K inchange semiconductor
2sk1531.pdf
isc N-Channel MOSFET Transistor 2SK1531DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr
Datasheet: 2SJ669
, 2SJ676
, 2SK1119
, 2SK1120
, 2SK1381
, 2SK1382
, 2SK1486
, 2SK1529
, AO3400
, 2SK1544
, 2SK1930
, 2SK2013
, 2SK2162
, 2SK2173
, 2SK2200
, 2SK2201
, 2SK2229
.
