2SK1530 - описание и поиск аналогов

2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit mm High-Power Amplifier Application High breakdown voltage VDSS = 200 V High forward transfer admittance Yfs = 5.0 S (typ.) Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Gate-source voltage VGSS 20 V

2SK1535 2SK1535

isc N-Channel MOSFET Transistor 2SK1534 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and soleno

isc N-Channel MOSFET Transistor 2SK1531 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr