BUK563-100A Todos los transistores

 ..1. Size:59K  philips
 buk563-100a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK563-100A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 100 V mount applications. ID Drain current (DC) 13 A The device is intended for use in Pt

 7.1. Size:53K  philips
 buk563-60a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK563-60A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for VDS Drain-source voltage 60 V surface mount applications. ID Drain current (DC) 21 A The device is intended for use in Pto

 7.2. Size:72K  philips
 buk563-48c 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK563-48C Voltage clamped logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNIT mode logic level field-effect power transistor in a plastic envelope V(CL)DSR Drain-source clamp voltage 40 48 58 V suitable for surface mount ID Drain current (DC) 21 A

 7.3. Size:58K  philips
 buk563-80b 1.pdf

Philips Semiconductors Product specification PowerMOS Transistor BUK563-80B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope. VDS Drain-source voltage 80 V The device is intended for use in ID Drain current (DC) 16 A Switched Mode Power Supplies Ptot Total pow