BUK563-100A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK563-100A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: SOT404

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BUK563-100A Datasheet (PDF)

..1. Size:59K philips
buk563-100a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK563-100A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 100 Vmount applications. ID Drain current (DC) 13 AThe device is intended for use in Pt

7.1. Size:53K philips
buk563-60a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK563-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor ina plastic envelope suitable for VDS Drain-source voltage 60 Vsurface mount applications. ID Drain current (DC) 21 AThe device is intended for use in Pto

7.2. Size:72K philips
buk563-48c 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK563-48C Voltage clamped logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAProtected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNITmode logic level field-effect powertransistor in a plastic envelope V(CL)DSR Drain-source clamp voltage 40 48 58 Vsuitable for surface mount ID Drain current (DC) 21 A

7.3. Size:58K philips
buk563-80b 1.pdf

Philips Semiconductors Product specification PowerMOS Transistor BUK563-80B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope. VDS Drain-source voltage 80 VThe device is intended for use in ID Drain current (DC) 16 ASwitched Mode Power Supplies Ptot Total pow

Otros transistores... BUK545-100A , BUK545-100B , BUK552-100A , BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B , BUK555-200A , IRF4905 , BUK565-100A , BUK581-100A , BUK582-100A , BUK7506-30 , BUK7508-55 , BUK7510-30 , BUK7514-30 , BUK7514-55 .

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