BUK563-100A PDF and Equivalents Search

 

BUK563-100A Specs and Replacement

Type Designator: BUK563-100A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: SOT404

BUK563-100A substitution

- MOSFET ⓘ Cross-Reference Search

 

BUK563-100A datasheet

 ..1. Size:59K  philips
 buk563-100a 1.pdf pdf_icon

BUK563-100A

Philips Semiconductors Product specification PowerMOS transistor BUK563-100A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 100 V mount applications. ID Drain current (DC) 13 A The device is intended for use in Pt... See More ⇒

 7.1. Size:53K  philips
 buk563-60a 1.pdf pdf_icon

BUK563-100A

Philips Semiconductors Product specification PowerMOS transistor BUK563-60A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for VDS Drain-source voltage 60 V surface mount applications. ID Drain current (DC) 21 A The device is intended for use in Pto... See More ⇒

 7.2. Size:72K  philips
 buk563-48c 1.pdf pdf_icon

BUK563-100A

Philips Semiconductors Product specification PowerMOS transistor BUK563-48C Voltage clamped logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNIT mode logic level field-effect power transistor in a plastic envelope V(CL)DSR Drain-source clamp voltage 40 48 58 V suitable for surface mount ID Drain current (DC) 21 A... See More ⇒

 7.3. Size:58K  philips
 buk563-80b 1.pdf pdf_icon

BUK563-100A

Philips Semiconductors Product specification PowerMOS Transistor BUK563-80B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope. VDS Drain-source voltage 80 V The device is intended for use in ID Drain current (DC) 16 A Switched Mode Power Supplies Ptot Total pow... See More ⇒

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Detailed specifications: BUK545-100A , BUK545-100B , BUK552-100A , BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B , BUK555-200A , IRFP260 , BUK565-100A , BUK581-100A , BUK582-100A , BUK7506-30 , BUK7508-55 , BUK7510-30 , BUK7514-30 , BUK7514-55 .

History: CEF08N8

Keywords - BUK563-100A MOSFET specs

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