BUK563-100A - Даташиты. Аналоги. Основные параметры

Philips Semiconductors Product specification PowerMOS transistor BUK563-100A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 100 Vmount applications. ID Drain current (DC) 13 AThe device is intended for use in Pt

Philips Semiconductors Product specification PowerMOS transistor BUK563-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor ina plastic envelope suitable for VDS Drain-source voltage 60 Vsurface mount applications. ID Drain current (DC) 21 AThe device is intended for use in Pto

Philips Semiconductors Product specification PowerMOS transistor BUK563-48C Voltage clamped logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAProtected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNITmode logic level field-effect powertransistor in a plastic envelope V(CL)DSR Drain-source clamp voltage 40 48 58 Vsuitable for surface mount ID Drain current (DC) 21 A

Philips Semiconductors Product specification PowerMOS Transistor BUK563-80B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope. VDS Drain-source voltage 80 VThe device is intended for use in ID Drain current (DC) 16 ASwitched Mode Power Supplies Ptot Total pow